医工学応用に向けた単結晶圧電体基板の高品質化を可能にする成長技術の開発という共同研究を推進中である。これまでに、PT（PbTiO3）/ HfO2を用いたガスセンサ応用を目的に、業界トップレベルの成果を得ており、この結果は第38回強誘電体会議（FMA38）及びJapanese Journal of Applied Physics※にて報告し、大きな反響を得た。

※Hansol Park, Takeshi Kijima and Hitoshi Tabata, ” Epitaxial growth technique for single-crystalline PbTiO3 thin film on Si substrate using an HfO2 buffer layer”, Jpn. J. Appl. Phys. 60 SFFB14:
https://iopscience.iop.org/article/10.35848/1347-4065/ac223e

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A joint research project is ongoing to develop a growth technology that enables high-quality single crystal piezoelectric substrate for medical engineering applications. Achieved industry-leading results for gas sensor applications using PT (PbTiO3) / HfO2, these results were reported at the 38th Ferroelectrics Meeting (FMA38) and at Japanese Journal of Applied Physics* and received a great response.

*Hansol Park, Takeshi Kijima and Hitoshi Tabata, ” Epitaxial growth technique for single-crystalline PbTiO3 thin film on Si substrate using an HfO2 buffer layer”, Jpn. J. Appl. Phys. 60 SFFB14:
https://iopscience.iop.org/article/10.35848/1347-4065/ac223e